Poly-SiGe for MEMS-above-CMOS Sensors

Poly-SiGe for MEMS-above-CMOS Sensors

5/5

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS.

First published
Aug 08, 2015
Publishers
Springer

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