Si Front-End Processing : Volume 669

Si Front-End Processing : Volume 669

Physics and Technology of Dopant-Defect Interactions III

by Erin C. Jones
5/5

This book focuses on the phenomena which control the three-dimensional dopant profile in deep submicron devices.

As device sizes continue to shrink, increasing the dopant activation while simultaneously decreasing the junction depth requires increasing co.

First published
2014
Publishers
University of Cambridge ESOL Examinations
Language
English

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